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| This novel process provides an improved manufacturing method for producing nanoporous silica films and semiconductor devices. Nanoporous silica film is formed on a substrate by placing the substrate coated with a precursor in a sealed chamber and evacuating the chamber to a pressure below atmosphere. Water and ammonia vapors are introduced, sequentially. The resulting films possess uniform thickness, small sized porosity, and low dielectric constant. Increased polymerization rates result in decreased processing time per wafer, minimum base catalyst use, and greater film uniformity across the wafer.Current future integrated circuit significantly smaller |
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Interested? This is an abstract of a technology that is available for sale or license. yet2.com can introduce you confidentially to the owner of this technology.
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