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| Honeywell has developed a practical, efficient method for cleaning residual submicron residue from the surface of semiconductor wafers after chemical-mechanical planarization (CMP). In this important post-CMP step, the wafer is subjected to buffing, brushing, or mechanical agitation with concurrent application of a specially formulated aqueous solution. This novel solution consists of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound. The solution is particularly effective with polyarlene ether films, which are favored for their enhanced circuit performance. Residual slurry particles smaller than 0.30 micron are quickly removed with this process. Notably, elimination of the underlying substrate from the organic film is prevented. In summary, this process is more predictable and stable while ensuring reliable intermetal dielectric layers for use in integrated circuits.advent multiple-layer metallization interconnect scheme integrated circuits intense technological focus development effort production functional reliable (ICs) |
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