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| 1. Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. 2.Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure. 3. A method of forming heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. 4. An Al target which comprises a body of Al/Al alloy having a grain size of less than 2 mm and a near ideal <110> fiber texture; method of making an Al target for magnetron sputtering which comprises: providing a body of fine grain Al/Al alloy having a grain size of less than 2 mm; heating the body to an elevated forging temperature in the range of 550.degree. F. to 900.degree. F.; and slow forging the body at the rate of 0.5 to 4 inches per minute to produce a preferred grain orientation in the <110> direction. 5. Methods of forming Ti-based mixed-metal materials and zirconium-based mixed-metal materials utilizing one or more of a reduction process, electrolysis process and iodide process. The invention also encompasses a sputtering target comprising zirconium and one or more elements selected from the group consisting of Al, B, Ba, Be, Ca, Ce, Co, Cs, Dy, Er, Fe, Gd, Hf, Ho, La, Mg, Mn, Mo, Nb, Nd, Ni, Pr, Sc, Sm, Sr, Ta, Ti, V, W, Y, and Yb. The invention also encompasses a sputtering target comprising titanium and boron. |
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