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Integrated Electrostatic Protective Resistor for Metal Oxide Semiconductor Field Effect Transistors (MOSFETS)
Most power MOSFETS (Metal Oxide Semiconductor Field Effect Transistors) users are very familiar with the "static sensitive devices" warning. The problem is that familiarity may breed contempt, especially if one has never destroyed a power MOSFET by improper handling. Statistically, it is unlikely that a particular MOSFET will be destroyed by Electrostatic-Discharge (ESD). However, when thousands of MOSFETs are handled, even a statistically small number of failures may be significant. In view of the fact the IR rejects less than 100 parts per million (ppm) at outgoing Q.A., it is evident that destroying 1 or 2 parts per 1,000 during incoming handling will have a significant impact on the perceived quality of the units. Our solution makes the MOSFET electrostatically protected and in turn more reliable. It eliminates the need for electrostatic handling and packaging precautions which would save the electronics industry millions of dollar.

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