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| Associated technologies permit growing atomic monolayer quantum structures of high purity, uniformity, and controllable size, and producing a high-efficiency light-emitting diode that does not suffer from reflection at the semiconductor/air boundary or blockage from its electrodes. Thus, next-generation optical devices and electronics can be developed that use quantum wires and similar structures, and LEDs can be produced that generate light uniformly over the entire area of the chip. These associated technologies are fundamental for the production of semiconductor quantum nanostructures.great interest light-emitting diodes whose raw material III-V group compound semiconductor (for AlGaAs AlGaInP AlGaInN) energy-saving long-lifetime source next-generation lighting devices expected replace incandescent lamp fluorescent |
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