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| When miniaturizing MOS field-effect transistors (MOSFETs) for their high degree of integration and high speed, a source and a drain come close to each other, and the drain field has an effect on the source. The phenomenon, called "short channel effect," deteriorates device performance. When a dual-gate structure is adopted, the drain field can effectively be shielded to enable suppression of the short channel effect. However, the dual-gate field effect transistor having an extremely thin channel layer poses an obstacle in impurity fluctuation and difficulty in manufacturing Si-fins of varying heights on the same substrate. This technology offers advanced TiN metal gate FinFET CMOS fabrication techniques that provide the solution for these FinFET fabrication issues, including TiN gate, fin-height control, and asymmetric gate insulator thickness. 4T-FinFETs have successfully been developed. One patent offers a semiconductor integrated circuit from which channel width differs on the same board and which as two or more MOS transistors of the same area. The other offers a double gate field effect transistor which can set up free threshold voltage.semiconductor integrated circuit double-gate MOS field-effect transistor (MOSFET) upstanding channel region laterally manufacturing |
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