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| Metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric-gate FETs have been under research and development for years because they may make a perfect memory: non-volatile when power is off, non-destructive during readout, speeds as fast as DRAM, and subject to ULSI scaling. But MFIS transistors have had a problem in that after writing, the data disappear in terms of memory transistor operation after about one day at most. Using the MFIS technology from AIST, data retentions of longer than 12 days have been achieved, along with high endurance for the writing pulse. The problem of overall size also may be helped by a self-aligning gate fabrication technique using hafnium-aluminum-oxide, which allows minimum overlaps for the gate with source and drain.MFIS transistors heretofore failed hold data period enables practical mainly buffer layer ferroelectric leakage current hence charge accumulated interface shields polarization impossible control electrical conduction source drain |
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