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| The present invention relates to semiconductor devices containing an electrically active dopant, said semiconductor devices being characterized by self stabilized junctions. Most modern optoelectronic and electro-optic devices are based on materials with local inhomogeneity in their chemical composition because the presence of chemical inhomogeneity is obligatory and results in the creation of a gradient of chemical potential of atomic species. Therefore just after its creation the concentration gradient starts to relax through the diffusion of the inhomogeneously distributed species. As a result of this the device can be used only during a time much smaller than the relaxation time. The way to prolong the life time of the device is to slow down the diffusion of the species that gives rise to the chemical inhomogeneity. The present invention provides for stabilizing concentration profiles in solids and to semiconductor devices incorporating such profiles, This novel methodology can dramatically change the properties of nano-devices.modern optoelectronic electro-optic devices (eg semiconductor wave mixtures waveguides) based materials local chemical inhomogeneity electric potential gradient heterocomposition initiates drives diffusion counters relaxes periods considerably shorter relaxation time extend lifetime slow carried temperatures stabilized due kinetic considerations |
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