An optical devices manufacturer seeks to screen out initial failure (infant mortality failure) by burn-in for components such as laser diodes and semiconductor optical amplifiers.
In order to meet increasing worldwide demand for large amounts of data transmission, it is essential to densely integrate optical functional devices that process large-capacity and high-speed optical signals.
Silicon photonics is a key technology that creates fine optical waveguide structures in silicon and integrates devices with various functions into one small chip. This makes it possible to achieve ultra-miniaturization and low power consumption in high-speed optical devices.
In silicon photonics, optical amplification and laser diodes are key technical capabilities, because it is not possible to achieve this in silicon-based material. Therefore, a new integrated silicon photonic chip on which III-V compound semiconductors are flip-chip bonded is expected to be a technological breakthrough.
The solution seeks to identify which III-V compound semiconductor chips are likely to fail at an early stage. It must be suitable for mass production.
- Applying electrical and thermal stress to BARE III-V compound semiconductor chips (not chip-on-carrier form)
- Applying electrical and thermal stress to III-V compound semiconductor chips that are bonded on silicon photonic chip
Possible Solution Areas
- EMS company focusing on optical device products such as semiconductor lasers
- Equipment manufacturers of high-precision flip-chip bonders
- MEMS foundry
Desired Outcome of the Solution
Partnership/collaboration opportunities with organizations/companies having technologies to identify early-stage failure of optical components and specialized in development and mass production.
Previously Attempted Solutions
Burn-in of III-V semiconductors used in currently available optical subassemblies is carried out by the form of chip-on-carriers (CoCs), and they are assembled with other optical elements. Its mass production technology is well-established.